Samsung is reportedly considering a redesign of its 6th-generation 1c DRAM in a bid to boost yield rates and gain an advantage in its forthcoming HBM4 process competition.
The Significance of Samsung’s 1c DRAM in the HBM4 Process and Memory Business Success
The tech giant from Korea is contemplating alterations to its 1c DRAM procedure, which is pivotal for the accomplishment of its HBM4 endeavor. ZDNet Korea reveals that Samsung has been analyzing designs for its sophisticated DRAM processes since the latter half of 2024. The company has now revamped its top-tier 1c DRAM to secure successful industry adoption of its future HBM processes. This move contrasts with the HBM3 variants, which encountered significant hurdles in integration with major players like NVIDIA.
According to the report, Samsung’s advanced DRAM process failed to meet the expected yield rates, approximately 60%-70%, preventing the company from advancing to mass production. The primary challenge seems to be the 1c DRAM chip’s size. Initially, Samsung aimed to reduce the chip size to enhance production volume, but this approach compromised process stability, leading to lower yield rates.
"Samsung Electronics has changed the design of its 1c DRAM to increase its chip size and is focusing on improving yields, targeting the middle of this year. It appears that they are focused on stable mass production of next-generation memory even if it costs more."
– ZDNet Korea
The 1c DRAM process is critical for Samsung’s HBM4 products. With competitors like SK Hynix and Micron already optimizing their designs, Samsung is feeling the pressure. After the difficulties with HBM3, it is crucial for Samsung to align its 1c DRAM process with industry benchmarks to maintain its foothold in the market.
The future of Samsung’s 6th-generation DRAM process remains uncertain. However, developments in the coming months might place Samsung’s HBM4 process on the right path for mass production by year’s end.
